Dynamic On-Resistance Evaluation Platforms

Current collapse is a major reliability concern in high voltage Gallium Nitride (GaN) lateral power High Electron Mobility Transistors (HEMTs). This effect can significantly increase the on-state resistance of the device. This phenomenon is known as dynamic ON-resistance, and its impact depends on various parameters and operating conditions.

Tell-i has developed flexible platforms to evaluate dynamic on-resistance of Infineon, GaN Power International, and GaN Systems devices under different testing conditions. A low-inductance shunt resistor as well as Tell-i voltage and current sensors are included to measure the dynamic on-resistance of the device under test (DUT). The shunt resistor can be bypassed to emulate the device behavior closer to practical power electronics converters. Under this circumstances, Tell-i current sensor (Tics) 10.2 output can be used to calculate the on-resistance of DUT.

You may purchase the platform for each technology or the manufacturing design files including the schematic capture, gerber files, and BOM. The plug and play version provides more flexibility for characterization of different GaN power devices..